Steep‐Slope IGZO Transistor Monolithically Integrated with Initialization‐Free Ag/Ti/Hf 0.8 Zr 0.2 O 2 Atomic Threshold Switch
Junmo Park; Hanggyo Jung; Deokjoon Eom; Heesoo Lee; Hyunhee Kim; Yonghoon Kim; Jongwook Jeon; Hyoungsub Kim
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/aelm.202400780
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Cite this source
Junmo Park; Hanggyo Jung; Deokjoon Eom; Heesoo Lee; Hyunhee Kim; Yonghoon Kim; Jongwook Jeon; Hyoungsub Kim. Steep‐Slope IGZO Transistor Monolithically Integrated with Initialization‐Free Ag/Ti/Hf 0.8 Zr 0.2 O 2 Atomic Threshold Switch. Advanced Electronic Materials. 2024-12-26. https://doi.org/10.1002/aelm.202400780