Improved electrical contact to multilayer MoS2-based field-effect transistor by tunable tellurium substitutional doping via MOCVD
Guen Hyung Oh; Ju Won Kim; Jong Min Song; Dong Hyun Seo; Sungjune Park; Hagyoul Bae; TaeWan Kim
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Materials Science in Semiconductor Processing
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.mssp.2024.109244
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Cite this source
Guen Hyung Oh; Ju Won Kim; Jong Min Song; Dong Hyun Seo; Sungjune Park; Hagyoul Bae; TaeWan Kim. Improved electrical contact to multilayer MoS2-based field-effect transistor by tunable tellurium substitutional doping via MOCVD. Materials Science in Semiconductor Processing. 2025-03. https://doi.org/10.1016/j.mssp.2024.109244