A Multi-WL Approach to Suppress Gate-Induced Drain Leakage, Floating Body Effect, and Row Hammer Effect in Array Transistor of 4F2 DRAM and 3D Stackable DRAM
Wei-Chen Chen; Hang-Ting Lue; Ming-Hung Wu; Xi-Wei Lin; Ko-Hsin Lee; Po-Chou Chen; Salvatore Maria Amoroso; Keh-Chung Wang; Chih-Yuan Lu
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE International Electron Devices Meeting (IEDM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/iedm50854.2024.10873338
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Cite this source
Wei-Chen Chen; Hang-Ting Lue; Ming-Hung Wu; Xi-Wei Lin; Ko-Hsin Lee; Po-Chou Chen; Salvatore Maria Amoroso; Keh-Chung Wang; Chih-Yuan Lu. A Multi-WL Approach to Suppress Gate-Induced Drain Leakage, Floating Body Effect, and Row Hammer Effect in Array Transistor of 4F2 DRAM and 3D Stackable DRAM. 2024 IEEE International Electron Devices Meeting (IEDM). 2024-12-07. https://doi.org/10.1109/iedm50854.2024.10873338