Dual Subgate-Assisted Tunneling Field-Effect Transistor Based on Regulation of MoS 2 Channel Surface Potential
Aoxuan Wang; Hongliang Lu; Yuming Zhang; Jiale Sun
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2025.3526130
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Cite this source
Aoxuan Wang; Hongliang Lu; Yuming Zhang; Jiale Sun. Dual Subgate-Assisted Tunneling Field-Effect Transistor Based on Regulation of MoS 2 Channel Surface Potential. IEEE Transactions on Electron Devices. 2025-03. https://doi.org/10.1109/ted.2025.3526130