Effects of indium within a barrier on the gate leakage current in an InAlGaN/GaN high-electron-mobility transistor
Atsushi Yamada; Toshihiro Ohki
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Applied Physics Express
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.35848/1882-0786/adc5d8
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Cite this source
Atsushi Yamada; Toshihiro Ohki. Effects of indium within a barrier on the gate leakage current in an InAlGaN/GaN high-electron-mobility transistor. Applied Physics Express. 2025-04-01. https://doi.org/10.35848/1882-0786/adc5d8