Unveiling the pressure-driven metal–semiconductor–metal transition in the doped TiS 2
Jiajun 佳骏 Chen 陈; Xindeng 心邓 Lv 吕; Simin 思敏 Li 李; Yaqian 雅倩 Dan 但; Yanping 艳萍 Huang 黄; Tian 田 Cui 崔
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Chinese Physics B
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1674-1056/ad4325
The original publisher provides the full text and its access options.
Cite this source
Jiajun 佳骏 Chen 陈; Xindeng 心邓 Lv 吕; Simin 思敏 Li 李; Yaqian 雅倩 Dan 但; Yanping 艳萍 Huang 黄; Tian 田 Cui 崔. Unveiling the pressure-driven metal–semiconductor–metal transition in the doped TiS 2. Chinese Physics B. 2024-06-01. https://doi.org/10.1088/1674-1056/ad4325