Performance of HfO 2 on High Electron Mobility Transistor for Microwave Applications
Swati Dhondiram Jadhav; Aboo Bakar Khan
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/edkcon62339.2024.10870791
The original publisher provides the full text and its access options.
Cite this source
Swati Dhondiram Jadhav; Aboo Bakar Khan. Performance of HfO 2 on High Electron Mobility Transistor for Microwave Applications. 2024 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON). 2024-11-30. https://doi.org/10.1109/edkcon62339.2024.10870791