Improved Stability of BEOL-Compatible Highly Scaled Ultrathin InZnO Channel Ferroelectric Thin-Film Transistor With TiO₂ Interfacial Layer
Yan-Kui Liang; Wei-Li Li; Yu-Lon Lin; Dong-Ru Hsieh; Tsung-Ying Yang; Tsung-Te Chou; Chi-Chung Kei; Huai-Ying Huang; Yu-Ming Lin; Yuan-Chieh Tseng; Tien-Sheng Chao; Edward Yi Chang; Kasidit Toprasertpong; Shinichi Takagi; Chun-Hsiung Lin
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3433835
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Yan-Kui Liang; Wei-Li Li; Yu-Lon Lin; Dong-Ru Hsieh; Tsung-Ying Yang; Tsung-Te Chou; Chi-Chung Kei; Huai-Ying Huang; Yu-Ming Lin; Yuan-Chieh Tseng; Tien-Sheng Chao; Edward Yi Chang; Kasidit Toprasertpong; Shinichi Takagi; Chun-Hsiung Lin. Improved Stability of BEOL-Compatible Highly Scaled Ultrathin InZnO Channel Ferroelectric Thin-Film Transistor With TiO₂ Interfacial Layer. IEEE Transactions on Electron Devices. 2024-09. https://doi.org/10.1109/ted.2024.3433835