Skip to content
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Conference paper

8-inch GaN Power Transistor Technology Using a Si-compatible Fab Facility

Shyh-Chiang Shen

Published
Publisher
IEEE
Journal / collection
2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/vlsitsa60681.2024.10546388

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Shyh-Chiang Shen. 8-inch GaN Power Transistor Technology Using a Si-compatible Fab Facility. 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA). 2024-04-22. https://doi.org/10.1109/vlsitsa60681.2024.10546388

Download RIS