Breaking the p-type doping barrier in β-Ga 2 O 3 : a GaN-based heterojunction bipolar transistor with high gain, high breakdown, and RF capability
Phuc Hong Than; Tho Quang Than; Yasushi Takaki
- Published
- Publisher
- Royal Society of Chemistry (RSC)
- Journal / collection
- RSC Advances
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1039/d5ra07197f
The original publisher provides the full text and its access options.
Cite this source
Phuc Hong Than; Tho Quang Than; Yasushi Takaki. Breaking the p-type doping barrier in β-Ga 2 O 3 : a GaN-based heterojunction bipolar transistor with high gain, high breakdown, and RF capability. RSC Advances. 2025. https://doi.org/10.1039/d5ra07197f