Review of: "The main advantage of 2D ballistic bipolar transistor devices is their very small and desirable power- delay processing criterion , which is calculated to be below 10 fJ"
Jessica Albron
- Published
- Publisher
- Qeios Ltd
- Journal / collection
- Qeios
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.32388/xskfgd
The original publisher provides the full text and its access options.
Cite this source
Jessica Albron. Review of: "The main advantage of 2D ballistic bipolar transistor devices is their very small and desirable power- delay processing criterion , which is calculated to be below 10 fJ". Qeios. 2024-12-30. https://doi.org/10.32388/xskfgd