Low-temperature epitaxial SiGe:P for gate-all-around n-channel metal-oxide-semiconductor devices
Yuta Fujimoto; Andriy Hikavyy; Clement Porret; Erik Rosseel; Gianluca Rengo; Roger Loo
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Japanese Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.35848/1347-4065/ad75da
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Cite this source
Yuta Fujimoto; Andriy Hikavyy; Clement Porret; Erik Rosseel; Gianluca Rengo; Roger Loo. Low-temperature epitaxial SiGe:P for gate-all-around n-channel metal-oxide-semiconductor devices. Japanese Journal of Applied Physics. 2024-09-02. https://doi.org/10.35848/1347-4065/ad75da