Achieving N/P Doping of MoS₂ Through ZnO Interface Engineering in Heterostructures for Semiconductor Devices
Lijun Xu; Guohui Zhan; Kun Luo; Yukun Shi; Pengcong Mu; Yan Liu; Qinzhi Xu; Jiangtao Liu; Zhenhua Wu
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Journal of the Electron Devices Society
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/jeds.2025.3594757
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Cite this source
Lijun Xu; Guohui Zhan; Kun Luo; Yukun Shi; Pengcong Mu; Yan Liu; Qinzhi Xu; Jiangtao Liu; Zhenhua Wu. Achieving N/P Doping of MoS₂ Through ZnO Interface Engineering in Heterostructures for Semiconductor Devices. IEEE Journal of the Electron Devices Society. 2025. https://doi.org/10.1109/jeds.2025.3594757