Amorphous TeO2 as p-type oxide semiconductor for device applications
John Robertson; Xuewei Zhang; Qingzhong Gui; Yuzheng Guo
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0206621
The original publisher provides the full text and its access options.
Cite this source
John Robertson; Xuewei Zhang; Qingzhong Gui; Yuzheng Guo. Amorphous TeO2 as p-type oxide semiconductor for device applications. Applied Physics Letters. 2024-05-20. https://doi.org/10.1063/5.0206621