The Effects of Threshold Voltage and Number of Fins Per Transistor on the TID Response of GF 12LP Technology
Aldo I. Vidana; Nathaniel A. Dodds; R. Nathan Nowlin; Trace M. Wallace; Phil J. Oldiges; Brian M. Dodd; Jenny Xiong; Rick M. Cadena; James Trippe; Jeffrey S. Kauppila; Lloyd W. Massengill; Hugh J. Barnaby
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Nuclear Science
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/tns.2024.3359113
The original publisher provides the full text and its access options.
Cite this source
Aldo I. Vidana; Nathaniel A. Dodds; R. Nathan Nowlin; Trace M. Wallace; Phil J. Oldiges; Brian M. Dodd; Jenny Xiong; Rick M. Cadena; James Trippe; Jeffrey S. Kauppila; Lloyd W. Massengill; Hugh J. Barnaby. The Effects of Threshold Voltage and Number of Fins Per Transistor on the TID Response of GF 12LP Technology. IEEE Transactions on Nuclear Science. 2024-04. https://doi.org/10.1109/tns.2024.3359113