Charged Thin Film Enables Dopant Free Ohmic Metal-Semiconductor Contact Formation
Lassi Lahtiluoma; Olli Eemeli Setälä; Ville Vahanissi; Hele Savin
- Published
- Publisher
- Elsevier BV
- Research area
- Semiconductors
- Source type
- Preprint / posted paper
- DOI
- 10.2139/ssrn.5102054
This is a preprint or other posted paper. Check the original source for its review and publication status.
The original publisher provides the full text and its access options.
Cite this source
Lassi Lahtiluoma; Olli Eemeli Setälä; Ville Vahanissi; Hele Savin. Charged Thin Film Enables Dopant Free Ohmic Metal-Semiconductor Contact Formation. Elsevier BV. 2025. https://doi.org/10.2139/ssrn.5102054