A n-ZnO/p-Diamond Heterojunction Field Effect Transistor with a p-Type Buried Layer
Jie Zheng; Zhiyuan He; Liuan Li; Yu Zhao
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/sslchinaifws64644.2024.10835354
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Cite this source
Jie Zheng; Zhiyuan He; Liuan Li; Yu Zhao. A n-ZnO/p-Diamond Heterojunction Field Effect Transistor with a p-Type Buried Layer. 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS). 2024-11-18. https://doi.org/10.1109/sslchinaifws64644.2024.10835354