High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate
Yinhe Wu; Xingchi Ma; Longyang Yu; Xin Feng; Shenglei Zhao; Weihang Zhang; Jincheng Zhang; Yue Hao
- Published
- Publisher
- MDPI AG
- Journal / collection
- Micromachines
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/mi15111343
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Cite this source
Yinhe Wu; Xingchi Ma; Longyang Yu; Xin Feng; Shenglei Zhao; Weihang Zhang; Jincheng Zhang; Yue Hao. High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate. Micromachines. 2024-10-31. https://doi.org/10.3390/mi15111343