Nanoscale Channel Length MoS 2 Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes
Xionghui Jia; Zhixuan Cheng; Yiwen Song; Yi Zhang; Yu Ye; Minglai Li; Xing Cheng; Wanjin Xu; Yanping Li; Lun Dai
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Materials & Interfaces
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsami.4c01980
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Cite this source
Xionghui Jia; Zhixuan Cheng; Yiwen Song; Yi Zhang; Yu Ye; Minglai Li; Xing Cheng; Wanjin Xu; Yanping Li; Lun Dai. Nanoscale Channel Length MoS 2 Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes. ACS Applied Materials & Interfaces. 2024-03-21. https://doi.org/10.1021/acsami.4c01980