Al1−xScxSbyN1−y: An opportunity for ferroelectric semiconductor field effect transistor
Shujin Guo; Xianghua Kong; Hong Guo
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Science China Physics, Mechanics & Astronomy
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1007/s11433-024-2466-0
The original publisher provides the full text and its access options.
Cite this source
Shujin Guo; Xianghua Kong; Hong Guo. Al1−xScxSbyN1−y: An opportunity for ferroelectric semiconductor field effect transistor. Science China Physics, Mechanics & Astronomy. 2024-09-14. https://doi.org/10.1007/s11433-024-2466-0