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Research literature / Conference paper

Transistor Breakdown Detection Circuit Design Based on CMOS BCD Process for High-voltage Output Stage of Neural Stimulators

Shengyuan Shi; Zeyu Lu; Xu Liu

Published
Publisher
IEEE
Journal / collection
2024 9th International Conference on Integrated Circuits and Microsystems (ICICM)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/icicm63644.2024.10814162

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Shengyuan Shi; Zeyu Lu; Xu Liu. Transistor Breakdown Detection Circuit Design Based on CMOS BCD Process for High-voltage Output Stage of Neural Stimulators. 2024 9th International Conference on Integrated Circuits and Microsystems (ICICM). 2024-10-25. https://doi.org/10.1109/icicm63644.2024.10814162

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