Nonvolatile Memory Device Based on the Ferroelectric Metal/Ferroelectric Semiconductor Junction
Yan Li; Yulin Yang; Hanzhang Zhao; Hongxu Duan; Chao Yang; Tai Min; Tao Li
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- Nano Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acs.nanolett.4c05887
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Cite this source
Yan Li; Yulin Yang; Hanzhang Zhao; Hongxu Duan; Chao Yang; Tai Min; Tao Li. Nonvolatile Memory Device Based on the Ferroelectric Metal/Ferroelectric Semiconductor Junction. Nano Letters. 2025-01-15. https://doi.org/10.1021/acs.nanolett.4c05887