β-Ga 2 O 3 Based Bulk-Planar Junctionless Transistor for Superior Electrostatic Integrity at Sub-7nm Technology
Gagan; Akansha Aggarwal; Himanshu Marothya
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/iatmsi60426.2024.10502408
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Cite this source
Gagan; Akansha Aggarwal; Himanshu Marothya. β-Ga 2 O 3 Based Bulk-Planar Junctionless Transistor for Superior Electrostatic Integrity at Sub-7nm Technology. 2024 IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI). 2024-03-14. https://doi.org/10.1109/iatmsi60426.2024.10502408