Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport
Artem Musiienko; Fengjiu Yang; Thomas William Gries; Chiara Frasca; Dennis Friedrich; Amran Al-Ashouri; Elifnaz Sağlamkaya; Felix Lang; Danny Kojda; Yi-Teng Huang; Valerio Stacchini; Robert L. Z. Hoye; Mahshid Ahmadi; Andrii Kanak; Antonio Abate
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Nature Communications
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1038/s41467-023-44418-1
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Cite this source
Artem Musiienko; Fengjiu Yang; Thomas William Gries; Chiara Frasca; Dennis Friedrich; Amran Al-Ashouri; Elifnaz Sağlamkaya; Felix Lang; Danny Kojda; Yi-Teng Huang; Valerio Stacchini; Robert L. Z. Hoye; Mahshid Ahmadi; Andrii Kanak; Antonio Abate. Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport. Nature Communications. 2024-01-05. https://doi.org/10.1038/s41467-023-44418-1