Growth of CuAlO 2 on SiO 2 under a layer-by-layer approach conducted by digitally processed DC sputtering and its transistor characteristics
Mehdi Ali; Daiki Yamashita; Hideo Isshiki
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Japanese Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.35848/1347-4065/ad2aa5
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Cite this source
Mehdi Ali; Daiki Yamashita; Hideo Isshiki. Growth of CuAlO 2 on SiO 2 under a layer-by-layer approach conducted by digitally processed DC sputtering and its transistor characteristics. Japanese Journal of Applied Physics. 2024-03-01. https://doi.org/10.35848/1347-4065/ad2aa5