Ultrafast Characteristics of Integrated High-Power Photoconductive Semiconductor Switch Based on 4H-SiC Substrate
Yangfan Li; Longfei Xiao; Chongbiao Luan; Xun Sun; Huiru Sha; Jian Jiao; Biao Yang; Deqiang Li; Yan Qin; Xiufang Chen; Hongtao Li; Xiangang Xu
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3492149
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Cite this source
Yangfan Li; Longfei Xiao; Chongbiao Luan; Xun Sun; Huiru Sha; Jian Jiao; Biao Yang; Deqiang Li; Yan Qin; Xiufang Chen; Hongtao Li; Xiangang Xu. Ultrafast Characteristics of Integrated High-Power Photoconductive Semiconductor Switch Based on 4H-SiC Substrate. IEEE Transactions on Electron Devices. 2025-01. https://doi.org/10.1109/ted.2024.3492149