Study on E-Mode AlGaN/GaN High-Electron Mobility Transistor with Composite P-GaN Cap and Recessed Gate Structure
Abdullah Al Fahad; Priyotous Banik Tirtha; Arefin Ahamed Shuvo; Ashraful Ghani Bhuiyan
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE International Conference on Power, Electrical, Electronics and Industrial Applications (PEEIACON)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/peeiacon63629.2024.10800040
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Cite this source
Abdullah Al Fahad; Priyotous Banik Tirtha; Arefin Ahamed Shuvo; Ashraful Ghani Bhuiyan. Study on E-Mode AlGaN/GaN High-Electron Mobility Transistor with Composite P-GaN Cap and Recessed Gate Structure. 2024 IEEE International Conference on Power, Electrical, Electronics and Industrial Applications (PEEIACON). 2024-09-12. https://doi.org/10.1109/peeiacon63629.2024.10800040