High-Speed, Low-Voltage Programmable/Erasable Flexible Two-Bit Organic Transistor Nonvolatile Memories Based on Ultraviolet-Ozone Treated Terpolymer Ferroelectric Gate
Yin Ding; Qingling Xu; Haitian Wei; Jing Su; Wei Wang
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Electron Device Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/led.2023.3337822
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Cite this source
Yin Ding; Qingling Xu; Haitian Wei; Jing Su; Wei Wang. High-Speed, Low-Voltage Programmable/Erasable Flexible Two-Bit Organic Transistor Nonvolatile Memories Based on Ultraviolet-Ozone Treated Terpolymer Ferroelectric Gate. IEEE Electron Device Letters. 2024-02. https://doi.org/10.1109/led.2023.3337822