AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation
Pingyu Cao; Kepeng Zhao; Harm Van Zalinge; Ping Zhang; Miao Cui; Fei Xue
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Journal of the Electron Devices Society
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/jeds.2024.3486454
The original publisher provides the full text and its access options.
Cite this source
Pingyu Cao; Kepeng Zhao; Harm Van Zalinge; Ping Zhang; Miao Cui; Fei Xue. AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation. IEEE Journal of the Electron Devices Society. 2024. https://doi.org/10.1109/jeds.2024.3486454