A Pseudo‐Junction Barrier Schottky Diode in p‐GaN/AlGaN/GaN High Electron Mobility Transistor Epitaxial Layers
Krishna Sai Sriramadasu; Yue-Ming Hsin
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.202300540
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Cite this source
Krishna Sai Sriramadasu; Yue-Ming Hsin. A Pseudo‐Junction Barrier Schottky Diode in p‐GaN/AlGaN/GaN High Electron Mobility Transistor Epitaxial Layers. physica status solidi (a). 2024-01-16. https://doi.org/10.1002/pssa.202300540