BEOL-Compatible In 2 O 3 Thin-Film Transistor with Linear Dielectric ZrO 2 Achieving Dielectric Constant over 27 and Enhanced Field-Effect Mobility Up To 89.3 cm 2 ·V −1 ·s −1
Zehao Lin; Peide D. Ye
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE Silicon Nanoelectronics Workshop (SNW)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/snw63608.2024.10639205
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Cite this source
Zehao Lin; Peide D. Ye. BEOL-Compatible In 2 O 3 Thin-Film Transistor with Linear Dielectric ZrO 2 Achieving Dielectric Constant over 27 and Enhanced Field-Effect Mobility Up To 89.3 cm 2 ·V −1 ·s −1. 2024 IEEE Silicon Nanoelectronics Workshop (SNW). 2024-06-15. https://doi.org/10.1109/snw63608.2024.10639205