Pinch-off driven near-ideal output characteristics of n-Ga2O3/p-GaN light effect transistor for UV photonics
Arnab Mondal; Manoj K. Yadav; Arpit Nandi; Shiv Kumar; Indraneel Sanyal; Satinder K. Sharma; Jen-Inn Chyi; Ankush Bag
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0215146
The original publisher provides the full text and its access options.
Cite this source
Arnab Mondal; Manoj K. Yadav; Arpit Nandi; Shiv Kumar; Indraneel Sanyal; Satinder K. Sharma; Jen-Inn Chyi; Ankush Bag. Pinch-off driven near-ideal output characteristics of n-Ga2O3/p-GaN light effect transistor for UV photonics. Applied Physics Letters. 2024-07-08. https://doi.org/10.1063/5.0215146