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A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET

Huu Thai Bui; Chun-Hsing Shih; Dang Chien Nguyen

Published
Publisher
Dalat University
Journal / collection
Dalat University Journal of Science
Research area
Semiconductors
Source type
Journal article
DOI
10.37569/dalatuniversity.14.3s.1313(2024)

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Huu Thai Bui; Chun-Hsing Shih; Dang Chien Nguyen. A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET. Dalat University Journal of Science. 2024-09-25. https://doi.org/10.37569/dalatuniversity.14.3s.1313(2024)

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